High Power GaN Field Effect Transistors on Si Substrates

High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

GaN transistors on Si for switching and high-frequency applications

AlGaN/GaN High-Electron-Mobility Transistors on Different Substrates

The performance ofaluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTS) diamond and silicon carbide (SiC) substrates is examined. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. Recently, identical AlGaN/GaN HEMTs have been fabricated at Cornell NanoScale Science & Technology Facility (CNF) on diamond, bu...

High Performance GaN HEMTs on 3-inch SI-SiC Substrates

Gallium Nitride (GaN) HEMTs are the focus of intense research and development due to their potential for the realization of MMIC power amplifiers (PAs) with high gain and record levels of power delivery [1]. Much of the work in GaN HEMT development has been concentrated on performance demonstration on 2” SiC and Sapphire substrates. Multiple groups have demonstrated GaN HEMTs delivering record ...